For all of the gate-gate maps, we provide raw data as a function of top and bottom gate voltages (in volts) and the capacitance of the corresponding BN dielectric (in units of F/nm^2). The conversion to density/filling factor and displacement field can be done according to the Methods section in the paper. Small correction in density were sometimes applied, owing to intrinsic doping and standard hysteresis effects when using lock-in measurement techniques. The convention for positive D in the paper is D>0 points from thin to thick. To convert from V to D, the sign of D is then decided by whether the thinner component is on top or on bottom. The raw data does not keep track of this, so for some devices, the formula for D needs to be multiplied by -1. 

For a few measurements, we provide the resistance data as a function of density and displacement field, which we note in the corresponding readme. 

For some data files, we provide a width-to-length ratio (WL) of the device channel, to convert from resistance to resistivity. If WL is not reported, either the ratio is 1 or the data is reported as resistivity. 

